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Integrated Photosensors
CNZ1413
Integrated Photosensors
Overview CNZ1413 are ultraminiature, highly reliable transmissive photosensors consisting of a high-efficiency GaAs infrared light emitting diode chip that is integrated with a high-sensitivity Siintegrated-photodetector chip in a double molded resin package.
Features Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm) Fast response : tPHL = 2.5µs, tPLH = 6 µs (typ.) (ON1413A) Highly precise position detection (slit width : 0.3 mm) Gap width : 1.2 mm With attachment positioning pin
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) VR
6
V
Input (Light
Forward current (DC) emitting diode)
IF
50 mA
Power dissipation
PD*1 75 mW
Output current
IO 20 mA
Output (Photo IC)
Output voltage Supply voltage Power dissipation
VO VCC PC*2
30 17 200
V V mW
Temperature
Operating ambient temperature Topr –25 to +85
Storage temperature
Tstg – 40 to +100
*1 Input power derating ratio i.