GAP3SHT33-CAU

Silicon Carbide Power Schottky Diode Features 3300 V Schottky rectifier 210 °C maximum operating temperature Positive temperature coefficient of VF Fast switching speeds Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages Improved circuit efficiency (Lower overall cost) Significantly reduced switching losses compare to Si PiN diodes Ease of paralleling devices without thermal runaway Smaller heat sink requirements Low reverse recovery current Low device capacitance Die Size = 1.39 mm x 1.39 mm Applications Down Hole Oil Drilling, Geothermal Instrumentation High Voltage Multipliers Military Power Supplies Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value Power dissipation Operating and storage temperature VRRM IF IF(RMS) IF,SM IF,max ∫i2 dt Ptot Tj , Tstg TC ≤ 125 °C, RthJC = 1.69 TC ≤ 125 °C, RthJC = 1.69 TC = 25 °C, tP = 10 ms TC = 125 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 25 °C, RthJC = 1.69 Values 3300 0.3 0.35 2 1 10 0.1 89 -55 to 210 Electrical Characteristics at Tj = 175 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Total capacitive charge Switching time Total capacitance Symbol VF IR QC ts C ...