GB01SHT06-CAU

  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Die Datasheet GB01SHT06-CAU   VRRM IF @ 25 oC QC = 650 V = 2.5 A = 7 nC   Die Size = 0.9 mm x 0.9 mm Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  Industry’s lowest device capacitance  Ideal for output switching of power supplies  Best in class reverse leakage current at operating temperature Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC) Maximum Ratings at Tj = 210 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value Power dissipation Operating and storage temperature VRRM IF IF IF(RMS) IF,SM IF,max ∫i2 dt Ptot Tj , Tstg TC = ...