High Temperature Silicon Carbide Power Schottky Diode
Features
1200 V Schottky rectifier 210°C maximum operating t...
High Temperature Silicon Carbide Power
Schottky Diode
Features
1200 V
Schottky rectifier 210°C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500
Die Datasheet
GB01SHT12-CAL
VRRM IF @ 25 oC
QC
= 1200 V = 2.5 A = 6 nC
Die Size = 0.9 mm x 0.9 mm
Advantages
High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery charge Industry’s lowest device capacitance Ideal for output switching of power supplies Best in class reverse leakage current at operating temperature
Applications
Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC)
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Repetitive peak reverse voltage Continuous forward current Continuous forward current RMS forward current Surge non-repetitive forward current, Half Sine Wave Non-repetitive peak forward current I2t value
Power dissipation
Operating and storage temperature
VRRM IF IF
IF(RMS)
IF,SM
IF,max ∫i2 dt Ptot Tj , Tstg
TC =...