IRF6217PBF-1

VDS RDS(on) max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) -150 2.4 6 -0.7 V Ω nC A IRF6217PbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF6217PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF6217PbF-1 IRF6217TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -0.7 -0.5 -5.0 2.5 0.02 ± 20 4.5 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through „ are on page 8 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF6217PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS...