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GA01PNS100-CAL Dataheets PDF



Part Number GA01PNS100-CAL
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Carbide PiN Diode Chip
Datasheet GA01PNS100-CAL DatasheetGA01PNS100-CAL Datasheet (PDF)

Silicon Carbide PiN Diode Chip   Die Datasheet GA01PNS100-CAL VRRM IF @ 25 oC QC = 10000 V = 2A = 5 nC Features  10 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages  Industry’s lowest conduction losses  Reduced stacking  Reduced system complexity/Increased reliability Die Size = 2.4 mm x 2.4 mm Applications  Voltage Multiplier  Ignition/Trigger Circuits  Oil/Downhole.

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Silicon Carbide PiN Diode Chip   Die Datasheet GA01PNS100-CAL VRRM IF @ 25 oC QC = 10000 V = 2A = 5 nC Features  10 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages  Industry’s lowest conduction losses  Reduced stacking  Reduced system complexity/Increased reliability Die Size = 2.4 mm x 2.4 mm Applications  Voltage Multiplier  Ignition/Trigger Circuits  Oil/Downhole  Lighting  Defense Maximum Ratings at Tj = 210 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continuous forward current RMS forward current Operating and storage temperature VRRM IF IF(RMS) Tj , Tstg Conditions TC ≤ 150 °C TC ≤ 150 °C Values 10 2 1 -55 to 210 Electrical Characteristics at Tj = 210 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Total reverse recovery charge Switching time Total capacitance Total capacitive charge VF IF = 2 A, Tj = 25 °C IF = 2 A, Tj = 210 °C IR VR = 10 kV, Tj = 25 °C VR = 10 kV, Tj = 210 °C Qrr ts IF ≤ IF,MAX dIF/dt = 70 A/μs Tj = 210 °C VR = 1000 V IF = 1.5 A VR = 1000 V IF = 1.5 A VR = 1 V, f = 1 MHz, Tj = 25 °C C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C QC VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 4.4 4.1 0.1 558 < 236 20 5 4 5 max. 4.8 4.5 3 50   Unit kV A A °C Unit V µA nC ns pF nC     Feb 2015   http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 1 of 5 Figures: Die Datasheet GA01PNS100-CAL   Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics Figure 4: Typical Turn Off Characteristics at Ik = 0.5 A and VR = 1000 V Figure 5: Typical Turn Off Characteristics at Tj = 210 °C and VR = 1000 V Figure 6: Reverse Recovery Charge vs Cathode Current Feb 2015 http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 2 of 5   Die Datasheet GA01PNS100-CAL   Figure 7: Reverse Recovery Time vs Cathode Current Feb 2015   http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 3 of 5   Mechanical Parameters Die Dimensions Anode pad size Area total / active Die Thickness Wafer Size Flat Position Die Frontside Passivation Anode Pad Metallization Backside Cathode Metallization Die Attach Wire Bond Reject ink dot size Recommended storage environment Chip Dimensions: Die Datasheet GA01PNS100-CAL 2.4 x 2.4 mm2 Φ 0.98 5.76/0.75 mm mm2 450 µm 76.2 mm 0 deg Polyimide 4000 nm Al 400 nm Ni + 200 nm Au Electrically conductive glue or solder Al ≤ 130 µm Φ ≥ 0.3 mm Store in original container, in dry nitrogen, < 6 months at an ambient temperature of 23 °C DIE METAL A [mm] B [mm] C [mm] 2.4 2.4 0.98 Feb 2015   http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 4 of 5 Date 2015/02/24 2012/08/15 Die Datasheet GA01PNS100-CAL   Revision 1 0 Revision History Comments Inserted Mechanical Parameters Initial release Supersedes Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. Feb 2015   http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/ Page 5 of 5   SPICE Model Parameters Die Datasheet GA01PNS100-CAL This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/pin/GA01PNS100-CAL_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GA01PNS100-CAL device. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155 * Dulles, VA 20166 * http://www.genesicsemi.com/index.php/hit-sic/baredie * * COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc. * ALL RIGHTS RESERVED * * These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY * OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED * TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A * PARTICULAR PURPOSE." * Models accurate up to 2 times rated drain current. * * Start of GA01PNS100-CAL SPICE Model *  .MODEL GA01PNS1.


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