Document
Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS100-CAL
VRRM IF @ 25 oC
QC
= 10000 V = 2A = 5 nC
Features
10 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Advantages
Industry’s lowest conduction losses Reduced stacking Reduced system complexity/Increased reliability
Die Size = 2.4 mm x 2.4 mm
Applications
Voltage Multiplier Ignition/Trigger Circuits Oil/Downhole Lighting Defense
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage Continuous forward current RMS forward current
Operating and storage temperature
VRRM IF
IF(RMS)
Tj , Tstg
Conditions
TC ≤ 150 °C TC ≤ 150 °C
Values
10 2 1
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage Reverse current Total reverse recovery charge Switching time
Total capacitance Total capacitive charge
VF
IF = 2 A, Tj = 25 °C IF = 2 A, Tj = 210 °C
IR
VR = 10 kV, Tj = 25 °C VR = 10 kV, Tj = 210 °C
Qrr ts
IF ≤ IF,MAX dIF/dt = 70 A/μs
Tj = 210 °C
VR = 1000 V IF = 1.5 A VR = 1000 V IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values typ. 4.4 4.1 0.1
558
< 236
20 5 4 5
max.
4.8 4.5 3 50
Unit kV A A °C
Unit V µA nC ns pF nC
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 5
Figures:
Die Datasheet
GA01PNS100-CAL
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Typical Junction Capacitance vs Reverse Voltage Characteristics
Figure 4: Typical Turn Off Characteristics at Ik = 0.5 A and VR = 1000 V
Figure 5: Typical Turn Off Characteristics at Tj = 210 °C and VR = 1000 V
Figure 6: Reverse Recovery Charge vs Cathode Current
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 2 of 5
Die Datasheet
GA01PNS100-CAL
Figure 7: Reverse Recovery Time vs Cathode Current
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 3 of 5
Mechanical Parameters
Die Dimensions Anode pad size Area total / active Die Thickness Wafer Size Flat Position Die Frontside Passivation Anode Pad Metallization Backside Cathode Metallization Die Attach Wire Bond Reject ink dot size
Recommended storage environment
Chip Dimensions:
Die Datasheet
GA01PNS100-CAL
2.4 x 2.4
mm2
Φ 0.98 5.76/0.75
mm mm2
450 µm
76.2 mm
0 deg
Polyimide
4000 nm Al
400 nm Ni + 200 nm Au
Electrically conductive glue or solder
Al ≤ 130 µm
Φ ≥ 0.3 mm
Store in original container, in dry nitrogen,
< 6 months at an ambient temperature of 23 °C
DIE METAL
A [mm]
B [mm]
C [mm]
2.4 2.4 0.98
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 4 of 5
Date 2015/02/24 2012/08/15
Die Datasheet
GA01PNS100-CAL
Revision 1 0
Revision History
Comments Inserted Mechanical Parameters
Initial release
Supersedes
Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage.
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 5 of 5
SPICE Model Parameters
Die Datasheet
GA01PNS100-CAL
This is a secure document. Please copy this code from the SPICE model PDF file on our website (http://www.genesicsemi.com/images/hit_sic/baredie/pin/GA01PNS100-CAL_SPICE.pdf) into LTSPICE (version 4) software for simulation of the GA01PNS100-CAL device.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.0
$
* $Date: 05-SEP-2013
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
* http://www.genesicsemi.com/index.php/hit-sic/baredie
*
* COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GA01PNS100-CAL SPICE Model *
.MODEL GA01PNS1.