GA01PNS150-CAU

Silicon Carbide PiN Diode Chip   Die Datasheet GA01PNS150-CAU VRRM IF @ 25 oC = 15000 V = 1A Features  15 kV blocking  210 °C operating temperature  Fast turn off characteristics  Soft reverse recovery characteristics  Ultra-Fast high temperature switching Advantages  Highest voltage rectifier commercially available  Reduced stacking  Reduced system complexity/Increased reliability Die Size = 2.4 mm x 2.4 mm Applications  Voltage Multiplier  Ignition/Trigger Circuits  Oil/Downhole  Lighting  Defense Maximum Ratings at Tj = 210 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage Continuous forward current RMS forward current Operating and storage temperature VRRM IF IF(RMS) Tj , Tstg Conditions Values 15 1 0.5 -55 to 210 Electrical Characteristics at Tj = 210 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Total reverse recovery charge Switching time Total capacitance Total capacitive charge VF IF = 1 A, Tj = 25 °C IF = 1 A, Tj = 210 °C IR VR = 15 kV, Tj = 25 °C VR = 15 kV, Tj = 210 °C Qrr ts IF ≤ IF,MAX dIF/dt = 70 A/μs Tj = 210 °C VR = 1000 V IF = 1.5 A VR = 1000 V IF = 1.5 A VR = 1 V, f = 1 MHz, Tj = 25 °C C VR = 400 V, f = 1 MHz, Tj = 25 °C VR = 1000 V, f = 1 MHz, Tj = 25 °C QC VR = 1000 V, f = 1 MHz, Tj = 25 °C min. Values typ. 6.4 4.3 1 558 < 236 22 4 3 4.5 max. 20 100         Unit kV A A °C Unit V µA nC ns pF nC Apr 2015 http://www.genesicsemi.c...