Silicon Carbide PiN Diode Chip
Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS80-CAL
VRRM IF @ 25 oC
= 8000 V = 2A
Features
8 kV blockin...
Description
Silicon Carbide PiN Diode Chip
Die Datasheet
GA01PNS80-CAL
VRRM IF @ 25 oC
= 8000 V = 2A
Features
8 kV blocking 210 °C operating temperature Fast turn off characteristics Soft reverse recovery characteristics Ultra-Fast high temperature switching
Die Size = 2.4 mm x 2.4 mm
Advantages
Reduced stacking Reduced system complexity/Increased reliability
Applications
Voltage Multiplier Ignition/Trigger Circuits Oil/Downhole Lighting Defense
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage Continuous forward current RMS forward current
Operating and storage temperature
VRRM IF
IF(RMS)
Tj , Tstg
Conditions
Values
8 2 1
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage Reverse current Total reverse recovery charge Switching time
Total capacitance Total capacitive charge
VF
IF = 2 A, Tj = 25 °C IF = 2 A, Tj = 210 °C
IR
VR = 8 kV, Tj = 25 °C VR = 8 kV, Tj = 210 °C
Qrr ts
IF ≤ IF,MAX dIF/dt = 70 A/μs
Tj = 210 °C
VR = 1000 V IF = 1.5 A VR = 1000 V IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values typ. 6.1 4.3 4 4
558
< 236
26 5 4 5.4
max.
Unit kV A A °C
Unit
V µA nC ns
pF nC
Apr 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
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