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QIC6508001

Powerex Power Semiconductors

Dual Common Emitter HV IGBT

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Preliminary Dual...


Powerex Power Semiconductors

QIC6508001

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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com QIC6508001 Preliminary Dual Common Emitter HVIGBT Module 85 Amperes/6500 Volts S NUTS (3TYP) A D FF J (2TYP) C 78 56 BE 1 23 H M H 4 G (3TYP) T (SCREWING DEPTH) R (DEEP) K (3TYP) L (2TYP) V (4TYP) U (5TYP) P Q N (NC) 4 5 6 7 8 1 2 3 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 C 1.89 48.0 D 4.88±0.01 124.0±0.25 E 2.24±0.01 57.0±0.25 F 1.18 30.0 G 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 Dimensions Inches Millimeters L 0.69±0.01 17.5±0.25 M 0.38 9.75 N 0.20 5.0 P 0.22 5.5 Q 1.44 36.5 R 0.16 4.0 S M6 Metric M6 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 V 0.28 Dia. 7.0 Dia. Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications. Features:  -40 to 150°C Extended  Temperature Range  100% Dynamic Tested  100% Partial Discharge Tested  Advanced Mitsubishi R-Series Chip Technology  Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance  Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules  Copper Baseplate  Creepage and Clearance Meet IE...




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