2SK604

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 800 V ±20 V 5 A 80 W 150 ℃ -55~150 ℃ 2SK604 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(on) Drain-Source On-Resistance VGS= 15V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 640V; VGS=0 VSD Forward On-Voltage IS= 5A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=3A; RL=50Ω toff Turn-off time 2SK604 MIN TYP MAX UNIT 800 V 1.0 5.0 V 3.5 Ω ±100 nA 1 μA 1.4 V 130 200 ns 155 240 ns 130 175 ns 530 705 ns · isc website：www.iscsemi.com 2 i...