isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·100% a...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
100
V
±20
V
20
A
80
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 1.56 62.5
UNIT ℃/W ℃/W
2SK629
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isc N-Channel MOSFET
Transistor
2SK629
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
VGS= 15V; ID= 5A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS=80V; VGS=0
MIN
TYP
MAX UNIT
100
V
1.0
5.0
V
0.1
Ω
±100 nA
1
μA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented o...