C6040

www.DataSheet4U.com TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC6040 Unit: mm High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) High breakdown voltage: VCES = 800 V, VCEO = 410 V Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 800 800 410 8 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C 1. Base 2. Collector 3. Emitter JEDEC JEITA TOSHIBA Weight: ― ― 2-7D101A 0.2 g (typ.) 1 2004-12-01 2SC6040 Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) VCB = 800 V, IE = 0 VEB = 8 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 0.2 A IC = 0.8 A, IB = 0.1 A IC = 0.8 A, IB = 0.1 A 20 µs tr VCC ≈ 200 V IB1 667 Ω IB1 IC IB2 OUTtstg IB21 PUT INPU...