isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fas...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching
Regulators ·DC-DC Converter, ·Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
450
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
3
A
ID(puls)
Pulsed Drain Current
12
A
Ptot
Total Dissipation@TC=25℃
25
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK2431
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
2SK2431
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA IS=3.0A ;VGS= 0 VGS= 10V; ID= 2A VGS= ±25V;VDS= 0 VDS= 450V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz
VGS=10V; ID=2A; RL=15Ω
MIN TYPE MAX UNIT
450
V
2.0
3.0
V
0.9
V
2.0
2.8
Ω
±10 µA
250 µA
330
15
pF
90
20
7 ns
20
30
NOTICE:
ISC res...