INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD8C
DESCRIPTION ·Collector-Emitter...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD8C
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A
APPLICATIONS ·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range
15 A
100 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.0 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD8C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO Collector Cutoff Current
VCE= 20V; IB= 0
hFE DC Current Gain
IC= 5A; VCE= 5V
MIN TYP. MAX UNIT 80 V 5V 80 V
2.0 V 2.0 mA 10
isc website:www.iscsemi.cn
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