isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·Collector-Emi...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
110
V
VCEO
Collector-Emitter Voltage
110
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=75℃
TJ
Junction Temperature
15
A
100
W
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.0 ℃/W
3DD8D
isc website:www.iscsemi.cn
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO
Collector Cutoff Current
VCE= 20V; IB= 0
hFE
DC Current Gain
IC= 5A; VCE= 5V
3DD8D
MIN TYP. MAX UNIT
110
V
5
V
110
V
2.0
V
2.0 mA
10
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