isc Silicon NPN Power Transistor
BD949F/951F/953F/955F
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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