BDY13-6

isc Silicon NPN Power Transistor BDY13-6 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current 0.3 A PC Collector Power Dissipation@TC=45℃ 26 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDY13-6 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA; IE= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1 V VBE(sat) Base-Emitter Saturation Voltage IC=3A; IB= 0.3A 1.3 V ICES Collector Cutoff Current VCE= 60V; VBE= 0 1.0 uA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 uA hFE1 DC Current Gain IC= 0.01A; VCE= 1V 55 hFE2 DC Curre...