BU807

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BU807 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)* Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA VBE(sat)* Base-Emitter Saturation Voltage IC= 5A; IB= 50mA ICES Collector Cutoff Current VCE= 330V; VBE= 0 ICEV Collector Cutoff Current VCE= 330V; VBE(off)= 6V IEBO Emitter Cutoff Current VEB= 6V; IC= 0 VECF* C-E Diode Forward Voltage IF= 4A *:Pulse test:pulse width≤300us,duty cycle≤1.5% BU807 MIN TYP. MAX UNIT 150 V 1.5 V 2.4 V 0.1 mA 0.1 mA 3.0 mA 2.0 V NOTICE： ...