isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Source Voltage-
: VDSS=800V(Min) ·Low RDS(ON) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
Drain
BUK456-800A
ID
Current-continuou
s@ TC=25℃
BUK456-800B
Ptot
Total Dissipation@TC=25℃
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
800
V
±30
V
4 A
3.5
125
W
150
℃
150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
60 ℃/W
BUK456-800A/B
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
BUK456-800A/B
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
800
V
VGS(th) Gate Threshold Voltage
VDS=VGS; ID=1mA
2.1
RDS(on)
Drain-Source On-stage Resistance
VGS=10V; ID=1.5A
BUK456-800A BUK456-800B
IGSS
Gate Source Leakage Current
VGS= ±30V;VDS= 0
4.0
V
3.0
Ω
4.0
Ω
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
20
uA
VSD
Diode Forward Voltage
IF=4.0A; VGS=0
1.3
V
Gfs
Forwar...
