2SK634

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±20 V 10 A 80 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 1.56 62.5 UNIT ℃/W ℃/W 2SK634 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(on) Drain-Source On-Resistance VGS= 15V; ID= 5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=360V; VGS=0 2SK634 MIN TYP MAX UNIT 400 V 1.0 5.0 V 0.7 Ω ±100 nA 1 μA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without noti...