isc N-Channel MOSFET Transistor
2SK635
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min)...
isc N-Channel MOSFET
Transistor
2SK635
FEATURES ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for high voltage, high speed power switching
applications such as switching
regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
500
V
±20
V
3
A
40
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 1.25 62.5
UNIT ℃/W ℃/W
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isc N-Channel MOSFET
Transistor
2SK635
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(on) Drain-Source On-Resistance
VGS= 15V; ID= 2A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS=500V; VGS=0
MIN
TYP
MAX UNIT
500
V
1.0
5.0
V
4.5
Ω
±100 nA
1
μA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...