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STU434S

SamHop Microelectronics

N-Channel Logic Level Enhancement Mode Field Effect Transistor

STU/D434SGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor ...


SamHop Microelectronics

STU434S

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STU/D434SGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 9.2 @ VGS=10V 40V 50A 11.5 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S STU SERIES TO - 252AA( D- PAK ) G DS STD SERIES TO - 251( I - PAK ) ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=70°C IDM -Pulsed b EAS Single Pulse Avalanche Energyd PD Maximum Power Dissipation a TC=25°C TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a Limit 40 ±20 50 40 147 91 42 27 -55 to 150 3 50 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice. 1 Nov,14,2008 www.samhop.com.tw STU/D434S Ver 1.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=32V , VGS=0V VGS= ±20V , VDS=0V 40 V 1 uA ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c CIS...




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