2SK778

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK778 DESCRIPTION ·Drain Current –ID=0.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Fast Switching Speed APPLICATIONS ·high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT DSS Drain-Source Voltage (VGS=0) 250 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 0.5 A Ptot Total Dissipation@TC=25℃ 10 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.0 Thermal Resistance,Junction to Ambient 62.5 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK778 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 0.25A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=250V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=0.25A; RL=400Ω MIN TYP MAX UNIT 250 V 1.5 4.0 V 6 9Ω ±100 nA 100 uA 25 ns 60 ns isc website：www.iscsemi.cn 2 ...