2SK791

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK791 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=850V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 850 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 3 A Total Dissipation@TC=25℃ 100 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 1.0 Thermal Resistance,Junction to Ambient 62.5 ℃/W ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK791 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1.5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=850V; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=1.5A; RL=133Ω toff Turn-off time MIN TYP MAX UNIT 850 V 1.5 3.5 V 3.3 4.5 ...