2SK857

isc N-Channel MOSFET Transistor 2SK857 DESCRIPTION ·Drain Current –ID=45A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 45 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS=0; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=25A IGSS Gate Source Leakage Current VGS= ±16V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 2SK857 MIN TYP. MAX UNIT 60 V 1.5 3.5 V 0.03 Ω ±100 nA 0.1 mA Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicat...