HFD5N60F

HFD5N60F_HFU5N60F HFD5N60F / HFU5N60F 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested Dec 2015 BVDSS = 600 V RDS(on) typ ȍ ID = 5 A D-PAK I-PAK 2 1 3 HFD5N60F 1 2 3 HFU5N60F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TA = 25୅) Power Dissipation (TC = 25୅) - Derate above 25୅ 600 5.0 3.2 20 ρ30 110 5.0 7.8 2.5 78 0.62 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ W W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșJA Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 1.6 50 110 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͦ͑͢͡ HFD5N60F_HFU5N60F Electrical Characterist...