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HFP4N60F
600V N-Channel MOSFET
Description
HFP4N60F July 2015 HFP4N60F 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ 7\S #9GS=10V 100% Avalanche Tes...
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