FDD13AN06A0

FDD13AN06A0 — N-Channel PowerTrench® MOSFET November 2013 FDD13AN06A0 N-Channel PowerTrench® MOSFET 60 V, 50 A, 13 mΩ Features RDS(on) = 11.5 mΩ ( Typ.) @ VGS = 10 V, ID = 50 A QG(tot) = 22 nC ( Typ.) @ VGS = 10 V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Applications Consumer Appliances LED TV Synchronous Rectification Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Formerly developmental type 82555 D G S D D-PAK G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 80oC, VGS = 10V) Continuous (TA = 25oC, VGS = 10V, RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy ( Note 1) PD Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature FDD13AN06A0 60 ±20 50 9.9 Figure 4 56 115 0.77 -55 to 175 Thermal Characteristics RθJC Rθ RθJA Thermal Resistance Junction to Case, Max. D-PAK Thermal Resistance Junction to Ambient, Max. D-PAK Thermal Resistance Junction to Ambient, Max. D-PAK, 1in2 copper pad area 1.3 100 52 Unit V V A A A mJ W W/oC oC oC/W oC/W oC/W ©2003 Fairchild Semiconductor Corporation FDD13AN06A0 Rev. C2 1 www.fairchildsemi.com FDD13AN06A0 — N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Device Marking FDD13AN06A0 Device FDD13AN06A0 Package D-PAK Reel Size 330 mm Tape Width 16 mm ...