Power MOSFET
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N...
Description
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N20T
Symbol VDSS VDGR VGSM ID25 IDM IA EAS
dv/dt
PD TJ TJM Tstg TL TSOLD MFCd Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) TO-263 TO-220 TO-3P
Maximum Ratings
200 200
V V
± 30 V
48 A 130 A
5A 500 mJ
3
250
-55 ... +175 175
-55 ... +175
300 260
10..65/2.2..14.6 1.13/10
2.5 3.0 5.5
V/ns
W
°C °C °C
°C °C Nm/lb.in Nm/lb.in
g g g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
200 V
2.5 4.5 V
± 100 nA
5 μA 250 μA 40 50 mΩ
VDSS = 200V ID25 = 48A RDS(on) ≤ 50mΩ
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S TO-3P (IXTQ)
D (Tab)
G D S
G = Gate S = Source
D (Tab)
D = Drain Tab = Drain
Features
z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC Choppers z AC M...
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