Power MOSFET
TrenchPTM Power MOSFETs
Preliminary Technical Information
IXTY48P05T IXTA48P05T IXTP48P05T
VDSS = ID25 = ≤RDS(on)
- ...
Description
TrenchPTM Power MOSFETs
Preliminary Technical Information
IXTY48P05T IXTA48P05T IXTP48P05T
VDSS = ID25 = ≤RDS(on)
- 50V - 48A
30mΩ
P-Channel Enhancement Mode Avalanche Rated
TO-252 (IXTY)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250μA
VGS(th)
VDS = VGS, ID = - 250μA
IGSS VGS = ± 15V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125°C
RDS(on)
VGS = -10V, ID = 0.5 ID25, Note 1
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Maximum Ratings - 50 - 50
V V
+ 15 V + 25 V
- 48 -150
A A
- 48 A 300 mJ
150 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 260
1.13 / 10
°C °C Nm/lb.in.
0.35 g 2.50 g 3.00 g
Characteristic Values Min. Typ. Max.
- 50 V
- 2.0
- 4.5 V
±50 nA
- 10 μA - 250 μA
30 mΩ
G S D (Tab)
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate D = Drain S = Source Tab = Drain
Features
z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test ...
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