5SNR10H2501

VCE = 2500 V IC = 1000 A ABB StakPak™ H Series Press-pack IGBT 5SNR 10H2501 PRELIMINARY High SOA Fails into stable shorted state High tolerance to uneven mounting pressure Designed for series connection Explosion resistant package Modular design concept, available for a wide range of current ratings SPT chip set Doc. No. 5SYA1580-03 May. 07 Maximum Rated Values1) Parameter2) Symbol Conditions Collector-emitter voltage DC collector current Repetitive peak collector current V CES IC ICM Tc = 75 °C Gate-emitter voltage Total power dissipation DC forward current Repetitive peak forward current V GES P tot IF IFM Tc = 25 °C, (IGBT) Tc = 75 °C Surge current I FSM VR = 0 V, tp = 10 ms, Tvj = 125 °C, half-sinewave IGBT short circuit SOA t psc VCC = 1500 V, VCEM ≤ 2500 V, VGE ≤15V Junction temperature T vj Storage temperature T stg Mounting force 2) FM 1)Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9 2)For detailed mounting instructions refer to ABB document no. 5SYA 2037-02 min 5 -40 40 max 2500 1000 2000 ± 20 10000 1000 2000 12.4 10 125 70 75 Unit V A A V W A A kA µs °C °C kN ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNR 10H2501 IGBT Characteristic Values3) Parameter Symbol Conditions min typ max Unit Collector-emitter saturation voltage V CEsat IC = 1000 A, VGE = 15 V Tvj = 25°C Tvj = 125°C 2.20 2.60 2.70 3.00 V V Collecto...