5SNA1200E250100

VCE = IC = 2500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E250100 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Doc. No. 5SYA 1557-02 July 04 Maximum rated values 1) Parameter Symbol Conditions Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 2) VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg M1 M2 M3 VGE = 0 V Tc = 80 °C tp = 1 ms, Tc = 80 °C Tc = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave VCC = 1900 V, VCEMCHIP ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C 1 min, f = 50 Hz Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 min max Unit 2500 V 1200 A 2400 A -20 20 V 11000 W 1200 A 2400 A 11000 A 10 µs 5000 V 150 °C -40 125 °C -40 125 °C -40 125 °C 46 8 10 Nm 23 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 1200E250100 IGBT characteristi...