5SNA1200E330100

VCE = IC = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Doc. No. 5SYA1556-03 May 05 Maximum rated values 1) Parameter Symbol Conditions min max Unit Collector-emitter voltage VCES VGE = 0 V DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES -20 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 2500 V, VCEMCHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 Case temperature Tc -40 Storage temperature Tstg -40 Mounting torques 2) Ms Base-heatsink, M6 screws Mt1 Main terminals, M8 screws 4 8 Mt2 Auxiliary terminals, M4 screws 2 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 3300 1200 2400 20 11750 1200 2400 V A A V W A A 12000 A 10 µs 6000 150 125 125 125 6 10 3 V °C °C °C °C ...