5SNE0800M170100

VCE = IC = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Doc. No. 5SYA1590-00 Oct 06 Maximum rated values 1) Parameter Symbol Conditions min Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C DC collector current IC Tc = 80 °C Peak collector current ICM tp = 1 ms, Tc = 80 °C Gate-emitter voltage VGES -20 Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) DC forward current IF Peak forward current Surge current IGBT short circuit SOA IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave tpsc VCC = 1200 V, VCEMCHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 Case temperature Tc -40 Storage temperature Tstg -40 Mounting torques 2) Ms Base-heatsink, M6 screws Mt1 Main terminals, M8 screws 4 8 Mt2 Auxiliary terminals, M4 screws 2 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max 1700 800 1600 20 4800 800 1600 6600 10 4000 150 125 125 125 6 10 3 Unit V A A V W A A A µs V °C...