5SNS0300U120100

VCE = IC = 1200 V 300 A IGBT Module LoPak5 SPT 5SNS 0300U120100 · Low-loss, rugged SPT chip-set · Smooth switching SPT chip-set for good EMC · Low profile compact baseless package for high power cycling capability · Snap-on PCB assembly · Integrated PTC substrate temperature sensor Doc. No. 5SYA1528-02 July 03 Maximum rated values 1) Parameter Symbol Conditions Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Case operating temperature Storage temperature Mounting torques VCES IC ICM VGES Ptot IF IFM IFSM tpsc Visol Tvj Tc(op) Tstg M1 M2 VGE = 0 V, Tvj ³ 25 °C Th = 60 °C tp = 1 ms, Th = 60 °C Th = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave VCC = 900 V, VCEMCHIP £ 1200 V VGE £ 15 V, Tvj £ 125 °C 1 min, f = 50 Hz Base-heatsink, M5 screws Main terminals, M6 screws 1) Maximum rated values indicate limits beyond which damage to the device may occur min 1200 -20 max 300 600 20 960 300 600 Unit V A A V W A A 3600 A 10 µs 2500 V 150 °C -40 125 °C -40 125 °C 23 Nm 45 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNS 0300U120100 IGBT characteristic values Parameter Symbol Conditions Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C Collector-emitter 2) saturation voltag...