Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK962
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min)
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
900 V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK962
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A
IGSS Gate Source Leakage Current
VGS= ±30V; VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0
ton Turn-on time toff Turn-off time
VGS=10V;ID=8A; RL=25Ω
VSD Diode Forward Voltage
IF=8A; VGS=0
MIN TYP. MAX UNIT
900 V
2.5 3.5 5.0 1.48 2.0
V Ω
±100 nA
500 uA
280 425
ns
460 690
ns
1.0 1.5
V
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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