2SK996

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE NIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 4 A Ptot Total Dissipation@TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W 2SK996 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=25 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=480V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=2A; RL=75Ω 2SK996 MIN TYP MAX UNIT 600 V 1.0 5.0 V 1.2 1.8 Ω ±1 uA 0.1 mA 40 ns 360 ns Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con...