IS46LD32800A

IS43/46LD16160A IS43/46LD32800A 256Mb (x16, x32) Mobile LPDDR2 S4 SDRAM FEATURES Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V High Speed Un-terminated Logic(HSUL_12) I/O Interface Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) Four-bit Pre-fetch DDR Architecture Multiplexed, double data rate, command/address inputs Four internal banks for concurrent operation Bidirectional/differential data strobe per byte of data (DQS/DQS#) Programmable Read/Write latencies(RL/WL) and burst lengths(4,8 or 16) ZQ Calibration On-chip temperature sensor to control self refresh rate Partial –array self refresh(PASR) Deep power-down mode(DPD) Operation Temperature Commercial (TC = 0°C to 85°C) Industrial (TC = -40°C to 85°C) Automotive, A1 (TC = -40°C to 85°C) Automotive, A2 (TC = -40°C to 105°C) OPTIONS Configuration: − 16Mx16 (4M x 16 x 4 banks) − 8Mx32 (2M x 32 x 4 banks) Package: − 134-ball BGA for x16 / x32 − 168-ball PoP BGA for x32 description AUGUST 2017 The IS43/46LD16160A/32800A is 256Mbit CMOS LPDDR2 DRAM. The device is organized as 4 banks of 4Meg words of 16bits or 2Meg words of 32bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 4N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully sy...