2SK1007

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 5 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W 2SK1007 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 2.5A IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 VSD Forward On-Voltage IS=5A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=10A; RL=25Ω toff Turn-off time 2SK1007 MIN TYP. MAX UNIT 450 V 2.5 3.5 5.0 V 1.1 1.6 Ω ±100 n...