isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fa...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current , high speed switching ·Switch mode power supplies ·DC-DC converters for telecom, industrial,and lighting
equipment ideal for monitor’s B+ function
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
450
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
15
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.56 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
2SK1063
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A
IGSS
Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 360V; VGS= 0
VSD)
Forward On-Voltage
ton
Turn-on time
toff
Turn-off time
IF= 15A; VGS= 0 VGS=10V;ID=8A; RL=3.75Ω
2SK1063
MIN TYP MAX UNIT
450
V
2.0
4.0
V
0....