isc N-Channel MOSFET Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast...
isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
3
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
80
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK904
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 10mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1.5A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=250V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2.1A; RL=50Ω
VSD
Diode Forward Voltage
IF=3A; VGS=0
2SK904
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
3.0
4.0
Ω
±100 nA
500 uA
60
90
ns
210 340
ns
1.0 1.35
V
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time w...