2SK906

isc N-Channel MOSFET Transistor 2SK906 DESCRIPTION ·Drain Current –ID=32A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for low voltage. ·high speed applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 32 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 10mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=16A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=3A; RL=50Ω VSD Diode Forward Voltage IF=32A; VGS=0 2SK906 MIN TYP. MAX UNIT 100 V 2.1 3.0 4.0 V 0.05 0.06 Ω ±100 nA 500 uA 120 180 ns 470 680 ns 1.5 2.0 V Notice： ISC reserves the rights to make changes of t...