2SK954

isc N-Channel MOSFET Transistor 2SK954 DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage. ·high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 3 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 80 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 10mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=1.5A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=2.1A; RL=50Ω VSD Diode Forward Voltage IF=3A; VGS=0 2SK954 MIN TYP. MAX UNIT 800 V 2.1 3.0 4.0 V 3.0 4.0 Ω ±100 nA 500 uA 60 90 ns 210 340 ns 1.00 1.35 V Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the a...