2SK956

isc N-Channel MOSFET Transistor 2SK956 DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 80 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS (BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=4A IGSS Gate Source Leakage Current VGS= ±30V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=9A; RL=25Ω VSD Diode Forward Voltage IF=9A; VGS=0 2SK956 MIN TYP. MAX UNIT 800 V 2.5 3.5 5.0 V 1.0 1.5 Ω ±100 nA 500 uA 280 425 ns 460 690 ns 1.05 1.58 V Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time withou...