Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK740
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed power switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
150 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 10 A
Total Dissipation@TC=25℃
50 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK740
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS=10 VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A
IGSS Gate Source Leakage Current
VGS= ±16V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS=120V; VGS= 0
VSD Diode Forward Voltage
IF=10A; VGS=0
tr Rise time
ton Turn-on time tf Fall time
VGS=10V;ID=5A; RL=6Ω
toff Turn-off time
MIN TYP MAX UNIT 150 V
2.0 4.0 V
0.12 0.15
Ω
±10 uA
250 uA
1.2 V
50 ns
70 ns 40 ns 110 ns
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
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