2SK751

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 20 A Ptot Total Dissipation@TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SK751 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 10A IGSS Gate Source Leakage Current VGS= ±16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=80V; VGS= 0 VSD Diode Forward Voltage IF=10A; VGS=0 2SK751 MIN TYP MAX UNIT 100 V 1.0 5.0 V 0.08 Ω ±10 uA 250 uA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equip...