CHM1191
K Band Mixer
GaAs Monolithic Microwave IC Description
The CHM1191 is a balanced Schottky diode mixer based on a ...
CHM1191
K Band Mixer
GaAs Monolithic Microwave IC Description
The CHM1191 is a balanced
Schottky diode mixer based on a six quarter wave ring structure. It could be use in receiver or transmitter part. This circuit is manufactured with the BESMMIC process: 1 µm
Schottky diode device, air bridges, via holes through the substrate, stepper lithography. An electrically identical chip with a mirror drawing versus de LO side is available under the part number CHM1190. These two MMICs could be helpful in a TX, RX architecture module. It is available in chip form.
Conversion gain (dB)
LO
IF
RF
-2
IF=2GHz
-4 -6 -8 -10 -12 21 22 23 LO Frequency (GHz) 24 25
Main Features
■ 22-24 GHz LO frequency range ■ IF from 1 to 3 GHz ■ Low conversion loss up & down ■ High LO/RF isolation ■ Low LO input power ■ Small chip size: 1.73 x 1.53 x 0.10 mm
Typical conversion characteristic (measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol
F_LO, F_IF Lc I_LO/RF
Parameter
LO frequency range IF frequency range Conversion loss @ P-LO = 7dBm LO/RF isolation
Typ
22-24 1-3 7 30
Unit
GHz GHz dB dBc
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. :DSCHM11919025
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHM1191
Electrical Characteristics
Tamb. = 25°C
Symbol
F_LO F_IF ...