CHM2179A

CHM2179a W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179a is a balanced Schottky diode mixer based on a six quarter wave ring structure. This circuit is manufactured with the BES-MMIC process: 1 µm Schottky diode device, air bridges, via holes through the substrate, stepper lithography. It is available in chip form. LO RF IF -5 ■ W-band LO and RF frequency range ■ Low conversion loss ■ IF from DC to 100MHz ■ High LO/RF isolation ■ High LO/AM noise rejection ■ Very low IF noise ■ Low LO input power ■ Small chip size: 1.53 x 1.17 x 0.10 mm Conversion loss (dB) Main Features -7,5 -10 -12,5 -15 75 75,5 76 76,5 77 77,5 78 LO Frequency (GHz) Typical conversion characteristic LO power = 5dBm ; IF=10MHz (measurement in test fixture) Main Characteristics Tamb. = 25°C Symbol F_LO,F_RF F_IF Lc I_LO/RF N_IF Parameter LO,RF frequency range IF frequency range Conversion loss LO/RF isolation IF noise density @ 100kHz Typ 76-77 DC-100 7.5 20 -158 Unit GHz MHz dB dB dBm/Hz ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCH21790192 - 22-Jun-00 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHM2179a Electrical Characteristics W-band Mixer Tamb. = 25°C, used according to section “Typical bias and IF configuration” and “Typical assembly and RF ...