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CHS2190A

United Monolithic Semiconductors

50-60GHz Reflective SPDT Switch

CHS2190a 50-60GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS2190a is a wideband monolithic ...


United Monolithic Semiconductors

CHS2190A

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Description
CHS2190a 50-60GHz Reflective SPDT Switch GaAs Monolithic Microwave IC Description The CHS2190a is a wideband monolithic diode based reflective switch. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a high performance Schottky diode process, 1µm gate length (stepper lithography), via holes through the substrate and air bridges. Main Features þ Broadband performances : 50-60GHz þ Low insertion loss : 2dB max þ High isolation : 25dB min þ Chip size : 2.16 x 0.75 x 0.10 mm Main Characteristics Tamb. = 25°C Symbol Il Is Is VSWR Parameter ON state insertion loss OFF state isolation @ Pin<6dBm OFF state isolation @ 6≤Pin≤15dBm Input and output matching Min Typ 1.5 Max 2 Unit dB dB dB 25 15 30 17 2:1 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHS21909137 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHS2190a Biasing conditions Symbol Voff Von Ion 50-60GHz Reflective SPDT switch Parameter OFF state control voltage ON state control voltage ON state control current Min -3 Typ 2.5 4.5 20 Max Unit V V 24 mA Absolute Maximum Ratings (1) Tamb = +25°C Symbol Vak Ig Pin Top Ts...




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