CHS2190a
50-60GHz Reflective SPDT Switch
GaAs Monolithic Microwave IC Description
The CHS2190a is a wideband monolithic ...
CHS2190a
50-60GHz Reflective SPDT Switch
GaAs Monolithic Microwave IC Description
The CHS2190a is a wideband monolithic diode based reflective switch. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a high performance
Schottky diode process, 1µm gate length (stepper lithography), via holes through the substrate and air bridges.
Main Features
þ Broadband performances : 50-60GHz þ Low insertion loss : 2dB max þ High isolation : 25dB min þ Chip size : 2.16 x 0.75 x 0.10 mm
Main Characteristics
Tamb. = 25°C Symbol
Il Is Is VSWR
Parameter
ON state insertion loss OFF state isolation @ Pin<6dBm OFF state isolation @ 6≤Pin≤15dBm Input and output matching
Min
Typ
1.5
Max
2
Unit
dB dB dB
25 15
30 17 2:1
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHS21909137
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHS2190a
Biasing conditions
Symbol
Voff Von Ion
50-60GHz Reflective SPDT switch
Parameter
OFF state control voltage ON state control voltage ON state control current
Min
-3
Typ
2.5 4.5 20
Max
Unit
V V
24
mA
Absolute Maximum Ratings (1)
Tamb = +25°C Symbol Vak Ig Pin Top Ts...