CJD112

CJD112 NPN CJD117 PNP SURFACE MOUNT SILICON COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112 and CJD117 are complementary silicon power Darlington transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25°C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJC Thermal Resistance ΘJA 100 100 5.0 2.0 4.0 50 20 1.75 -65 to +150 6.25 71.4 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO ICEV ICEV ICBO ICBO IEBO BVCEO VCE(SAT) VCE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE fT Cob Cob VCE=50V VCE=80V, VBE(off)=1.5V VCE=80V, VBE(off)=1.5V, TC=125°C VCB=80V VCB=100V VEB=5.0V IC=30mA IC=2.0A, IB=8.0mA IC=4.0A, IB=40mA IC=4.0A, IB=40mA VCE=3.0V, IC=2.0A VCE=3.0V, IC=0.5A VCE=3.0V, IC=2.0A VCE=3.0V, IC=4.0A VCE=10V, IC=750mA, f=1.0MHz VCB=10V, IE=0, f=0.1MHz (CJD112) VCB=10V, IE=0, f=0.1MHz (CJD117) 500 1000 200 25 MAX 20 10 500 10 20 2.0 100 2.0 3.0 4.0 2.8 12000 100 200 UNITS V V V A A mA W W °C °C/W °C/W UNITS μA μA μA μA μA mA V V V V V MHz pF pF R3 (21-Jan...